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| RF2369 3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOT 6-Lead Features Low Noise and High Intercept Point Adjustable Bias Current LNA Bypass Loss is +2dB 150MHz to 2500MHz Operation Meets IMD Tests with Two Gain States/Single Logic Control Line VREF/PD 1 Logic Control 6 SELECT GND1 2 5 GND2 RF IN 3 4 RF OUT Applications CDMA/Cellular Bypass LNA CDMA/Cellular Bypass Driver Amplifier General Purpose Amplification Commercial and Consumer Systems Functional Block Diagram Product Description The RF2369 is a switchable low noise amplifier with a very high dynamic range designed for digital cellular applications. The device functions as an outstanding front end low noise amplifier. When used as an LNA, the bias current can be set externally. When used as a PA driver, the IC can operate directly from a single cell Li-ion battery and includes a power down feature that can be used to completely turn off the device. The IC is featured in a standard SOT 6-lead plastic package. Ordering Information RF2369 RF2369PCBA-41X 3V Low Noise Amplifier/ 3V PA Driver Amplifier Fully Assembled Evaluation Board (LNA) Optimum Technology Matching(R) Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES(R), RFMD(R), Optimum Technology Matching(R), Enabling Wireless ConnectivityTM, PowerStar(R), POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. (c)2006, RF Micro Devices, Inc. Rev B3 DS070816 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 1 of 12 RF2369 Absolute Maximum Ratings Parameter Supply Voltage Input RF Level Operating Ambient Temperature Storage Temperature Rating -0.5 to +8.0 +10 -40 to +85 -40 to +150 Unit VDC dBm C C Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective2002/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. Parameter Overall Frequency Range Min. 150 869 14.0 9.0 Specification Typ. 824 to 894 Max. 2500 894 Unit MHz MHz Condition TAMB =25C, VCC =3.0V Cellular Low Noise Amplifier Frequency HIGH GAIN MODE Gain Noise Figure Input IP3 Input VSWR Output VSWR Current Drain BYPASS MODE Gain Input IP3 Input VSWR Output VSWR Current Drain 2.0 824 14.0 4 -65 -70 2:1 2:1 8.5 -3.0 +10 -2.0 +24 2:1 2:1 2.0 4.0 mA -1.0 mA Gain Select>1.8V, VPD/VREF =0V dB dBm 15.5 2.0 -3 +10 -2 +24 2:1 2:1 4.0 849 17.0 2.5 mA MHz Gain Select<0.8V, VPD/VREF =3V dB dB dBm dBc/30kHz dBc/30kHz POUT =+4dBm, +885kHz offset POUT =+4dBm, +1.98MHz offset -1 dB dBm 7.5 15.5 1.6 11.5 2:1 2:1 10.0 mA Gain Select>1.8V, VPD/VREF =0V 17.0 2.0 dB dB dBm Gain Select<0.8V, VPD/VREF =3V Cellular CDMA Driver Frequency HIGH GAIN MODE Gain Noise Figure Output Power ACPR1 ACPR2 Input VSWR Output VSWR Current Drain BYPASS MODE Gain Input IP3 Input VSWR Output VSWR Current Drain 2 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev B3 DS070816 RF2369 Parameter Power Supply Voltage (VCC) VSELECT Low VSELECT High Power Down 1.8 0 10 3 0.8 V V V A High Gain mode. Select<0.8V, VPD/VREF =3V Low Gain mode. Select>1.8V, VPD/VREF =0V Gain Select<0.8V, VPD/VREF =0V, VCC =0V Min. Specification Typ. Max. Unit Condition Bypass Possibility Gain Select >1.8V >1.8V VPD/VREF 0V 3V VCC 3V 3V Current 2.3mA 3.4mA Comments Recommended Bypass Mode Alternative Bypass Mode Rev B3 DS070816 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 3 of 12 RF2369 Pin 1 Function VREF/PD Description For low noise amplifier applications, this pin is used to control the bias current. An external resistor can be used to set the bias current for any VPD voltage. Interface Schematic VREF/PD 2 3 GND1 RF IN Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. RF input pin. To Bias Circuit RF OUT RF IN 4 RF OUT 5 GND2 Amplifier output pin. This pin is an open-collector output. It must be biased to VCC through a choke or matching inductor. This pin is typically matched to 50 with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. LNA emittance inductance. Total inductance is comprised of package+bondwire+stripline (L1) on PCB. 6 SELECT This pin selects high gain and bypass. Select < 0.8V, high gain. Select > 1.8V, low gain. Package Drawing 1.80 1.40 0.50 0.35 0.10 MAX. TEXT* 1.90 3.10 2.70 3.00 2.60 Shaded lead is pin 1. Dimensions in mm. 0.90 0.70 1.30 1.00 9 1 0.25 0.10 0.37 MIN. *When Pin 1 is in upper left, text reads downward (as shown). 4 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev B3 DS070816 RF2369 Application Schematic Cellular Low Noise Amplifier ~881MHz C1 0.1 F 1 C2 0.1 F 2 50 strip C6 33 nF L3 6.8 nH 3 4 L2 10 nH C3 3 pF 5 Logic Control R1 1.6 k VREF/PD 6 *C7 DNI L1 1.5 nH 50 strip SELECT J1 RF IN J2 RF OUT VCC C5 10 nF C4 100 pF * It is recommended added to initial customer PCBA layout for flexibility to optimize performance. Application Schematic Cellular Driver Amplifier ~836MHz C1 0.1 F 1 C2 0.1 F 2 50 strip C6 33 nF L3 6.8 nH 3 4 L2 10 nH VCC C5 10 nF C4 100 pF 5 C3 3 pF 50 strip Logic Control R1 1.3 k VREF/PD 6 L1 1.5 nH SELECT J1 RF IN J2 RF OUT Rev B3 DS070816 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 5 of 12 RF2369 Evaluation Board Schematic - Cellular LNA P1 P1-1 1 2 P1-3 3 CON3 VCC GND NC P2-3 P2-1 P2 1 2 3 CON3 C1 0.1 F 1 C2 0.1 F 2 50 strip C6 33 nF L3 6.8 nH 3 4 R2* DNI 2366401- VREF GND SELECT R1 1.6 k VREF Logic Control 6 L1 1.5 nH 5 C3 3 pF L2 10 nH 50 strip SELECT J1 RF IN J2 RF OUT VCC C5 10 nF C4 100 pF NOTE: Components with * following reference designator should not be populated on the evaluation board. 6 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev B3 DS070816 RF2369 Evaluation Board Layout Board Size 1.0" x 1.0" Board Thickness 0.032", Board Material FR-4 Rev B3 DS070816 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 7 of 12 RF2369 High Gain Mode Noise Figure versus VCC, 2.5 Gain (Bypass Mode) versus VCC -2.2 Cellular LNA Cellular LNA -2.3 2.0 -2.4 1.5 Bypass Gain (dB) Noise Figure (dB) -2.5 1.0 -2.6 -2.7 0.5 NF, -30C NF, +25C NF, +85C 0.0 2.5 2.7 2.9 3.1 3.3 3.5 -2.8 TEMP = -30C TEMP = 25C TEMP = 85C -2.9 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 VCC (V) VCC (V) IIP3 (High Gain Mode) versus VCC 14.0 Gain (High Gain Mode) versus VCC 17.0 Cellular LNA Cellular LNA 13.0 16.5 12.0 High Gain Gain (dB) TEMP = -30C TEMP = 25C TEMP = 85C High Gain IIP3 (dB) 11.0 16.0 10.0 15.5 9.0 15.0 TEMP=-30C TEMP=25C TEMP=85C 14.5 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 8.0 7.0 VCC (V) VCC (V) IIP3 (Bypass Mode) versus VCC 29.0 28.0 10.0 27.0 26.0 9.0 Total ICC (High Gain Mode) versus VCC 11.0 Cellular LNA Cellular LNA Bypass IIP3 (dB) 25.0 24.0 23.0 22.0 21.0 TEMP = -30C 20.0 19.0 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 TEMP = 25C TEMP = 85C Total ICC (mA) 8.0 7.0 6.0 5.0 TEMP = -30C TEMP = 25C TEMP = 85C 4.0 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 VCC (V) VCC (V) 8 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev B3 DS070816 RF2369 Bypass 1.0 0.6 2 .0 High Gain 0.6 Swp Max 6GHz 1.0 Swp Max 6GHz 2. 0 0.8 0 3. 0.8 10.0 10.0 10.0 Swp Min 0.05GHz -10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 .4 -0 . -0 4 -0. 6 -0. 6 Swp Min 0.05GHz -1.0 -0.8 -0.8 Rev B3 DS070816 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. -1.0 .0 -2 .0 -2 -4. 0 -5.0 -3 .0 -4. 0 -5.0 -0.2 -0.2 4.0 5.0 0 0 0.2 4.0 5.0 0. 4 -10.0 -3 .0 0. 4 0 3. 4.0 5.0 10.0 0.2 9 of 12 RF2369 Bypass Mode S11 S11 Bypass Mode 1.0 0 .6 2. 0 HighHigh Gain Mode S11 Gain Mode S11 1.0 0 .6 Swp Max 6GHz Swp Max 6GHz 2.0 0.8 0 3. 0.8 4 .0 5.0 0.2 0.2 10.0 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 .4 -0 .4 -0 6 - 0. - 0. 6 .0 -2 .0 -2 Swp Min 0.05GHz Swp Min 0.05GHz -1.0 -0.8 -0.8 Bypass Mode S22 S22 Bypass Mode 1.0 0 .6 2. 0 HighHigh Gain Mode S22 Gain Mode S22 0 .6 Swp Max 6GHz 1.0 -1.0 Swp Max 6GHz 2.0 0.8 3.0 0.8 3.0 4 .0 4 .0 5.0 0.2 0.2 10.0 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0 .4 -0 .4 -0 - 0. 6 Swp Min 0.05GHz - 0. 6 .0 -2 .0 -2 Swp Min 0.05GHz -0.8 -1.0 -0.8 10 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. -1.0 Rev B3 DS070816 -5.0 - 4. 0 -3 .0 -5.0 -0.2 -0.2 -10.0 -5.0 - 4. 0 -3 .0 0. 4 -10.0 -5.0 -0.2 -0.2 5.0 -10.0 0. 4 -10.0 -4. -4. 0 0 -3 .0 -3 .0 0. 4 0 3. 4 .0 5.0 10.0 0. 4 10.0 RF2369 RoHS* Banned Material Content RoHS Compliant: Package total w eight in grams (g Compliance Date Code: Bill of Materials Revision: Pb Free Category: Bill of Materials Die Molding Com pound Lead Fram e Die Attach Epoxy Wire Solder Plating Yes 0.013 435 Rev: B e3 Parts Per Million (PPM) Hg Cr VI 0 0 0 0 0 0 0 0 0 0 0 0 Pb 0 0 0 0 0 0 Cd 0 0 0 0 0 0 PBB 0 0 0 0 0 0 PBDE 0 0 0 0 0 0 This RoHS banned m aterial content declaration w as prepared solely on inform ation, including analytical data, provided to RFMD by its suppliers, and applies to the Bill of Materials (BOM) revision noted above. * DIRECTIVE 2002/95/EC OF THE EUROPEAN PARLIAMENT AND OF THE COUNCIL of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment Rev B3 DS070816 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. 11 of 12 RF2369 12 of 12 7628 Thorndike Road, Greensboro, NC 27409-9421 * For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. Rev B3 DS070816 |
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